Systematic investigations on microstructural development during the physical vapor deposition of SnSe thin films under high vacuum (10⁻⁶ mbar) on glass substrates have been carried out, so as to mold the functional properties for fabrication of novel Au/MoO3/p-SnSe/n-CdS/ITO/SLG heterojunction solar cells. the enhancements of the solar cell efficiency were slightly upgraded to reach 0.35% with respect to the annealing temperature. The optimum annealing temperatures gained from this study is (200) ☌. The structure properties of SnSe was studied through X-ray diffraction, and the results appears the increasing of the peaks intensity when annealing temperature increased and the grain size will be increased through the rang (19.78-59.64) nm. Different annealing temperatures (as prepared, 125,200, 275) ☌ effects on SnSe thin films were investigated. Thin-film of SnSe were deposit on p-Si substrates to establish a junction as solar cells. In this study tin selenide structure, optical properties and surface morphology were investigated and studies. The most applications that in this area are PV devices and batteries. The reasons for interest in SnSe due to the magnificent optoelectronic properties with other encouraging properties. The structure, optical, and electrical properties of SnSe and its application as photovoltaic device has been reported widely.
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